About this Abstract |
Meeting |
1st World Congress on Artificial Intelligence in Materials and Manufacturing (AIM 2022)
|
Symposium
|
First World Congress on Artificial Intelligence in Materials and Manufacturing (AIM 2022)
|
Presentation Title |
Neuromorphic Utilization of NVM Devices Using GeTe |
Author(s) |
Chaeho Lim |
On-Site Speaker (Planned) |
Chaeho Lim |
Abstract Scope |
This study relates to the possibility of neuromorphic utilization of devices with metal-insulator transition materials. Chalcogenide compounds are the most important substance using in RRAM, due to their unique behavior(metal-insulator transition). Various efforts are being made to discover more improved materials that satisfy switching characteristics (on/off ratio) and memory device behavior (microstructure change). In this study, Germanium–Tellurium compounds are used as Metal-Insulator Transition materials. It is also constructed in MIM structures for DC/AC electrical measurements. Volatile / Non-volatile Memory I-V characteristics (unipolar/bipolar) were controlled by multilayer structure. (GeTe+ Other). Impedance measurements were performed to correlate structure and characteristics. The results of this study demonstrate the availability of volatile, non-volatile memory devices from GeTe materials. Furthermore, it is expected to provide insight into the possibility of neuromorphic utilization of NVM devices using GeTe. |
Proceedings Inclusion? |
Undecided |