About this Abstract |
Meeting |
2024 TMS Annual Meeting & Exhibition
|
Symposium
|
Computational Thermodynamics and Kinetics
|
Presentation Title |
Misfit Dislocation Structure and Thermal Boundary Conductance of GaN/AlN Interfaces |
Author(s) |
Jiaqi Sun, Yang Li, Yenal Karaasalan, Cem Sevik, Youping Chen |
On-Site Speaker (Planned) |
Jiaqi Sun |
Abstract Scope |
In this talk, we present a study on the structure and thermal boundary conductance of the wurtzite GaN/AlN (0001) interface using molecular dynamics simulation. Simulation results with three different empirical interatomic potentials have produced similar misfit dislocation networks and dislocation core structures. Specifically, the misfit dislocation network at the GaN/AlN interface is found to consist of pure edge dislocations with Burgers vector of 1⁄3 〈12 ̅10〉 and the misfit dislocation core has an 8-atom ring structure. Although different interatomic potentials lead to different dislocation properties and thermal conductance values, all have demonstrated a significant effect of misfit dislocations on the thermal boundary conductance of the GaN/AlN (0001) interface. |
Proceedings Inclusion? |
Planned: |
Keywords |
Modeling and Simulation, Thin Films and Interfaces, |