|About this Abstract
||2022 TMS Annual Meeting & Exhibition
||Materials Processing Fundamentals
||Site Preference of Ti in 6H-SiC: A Combined Photoluminescence and Theoretical Calculation Study
||Hui Chen, Kazuki Morita
|On-Site Speaker (Planned)
SiC is a promising material for high-voltage power devices due to its high electron mobility. The top seeded solution growth (TSSG) method is an efficient method to grow SiC from the Si–Ti solvent at low temperature, and therefore, Ti exists as a background impurity in the SiC crystals produced by TSSG. The Ti impurity affects the properties of SiC by forming deep levels inside the bandgap, and as thus, reducing the minority carrier lifetime. However, it is difficult to confirm the site preference of Ti in 6H-SiC, since the Ti acceptor level is inactive in 6H-SiC. In this work, a combined photoluminescence (PL) and theoretical calculation study was conducted to research the bonding state of Ti in 6H-SiC. The PL spectra for the Ti-doped 6H-SiC were measured at low temperature, and the corresponding theoretical calculation was performed to confirm the site preference of Ti in 6H-SiC.
||Ceramics, Computational Materials Science & Engineering, High-Temperature Materials