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Meeting 2022 TMS Annual Meeting & Exhibition
Symposium Materials Processing Fundamentals
Presentation Title Site Preference of Ti in 6H-SiC: A Combined Photoluminescence and Theoretical Calculation Study
Author(s) Hui Chen, Kazuki Morita
On-Site Speaker (Planned) Hui Chen
Abstract Scope SiC is a promising material for high-voltage power devices due to its high electron mobility. The top seeded solution growth (TSSG) method is an efficient method to grow SiC from the Si–Ti solvent at low temperature, and therefore, Ti exists as a background impurity in the SiC crystals produced by TSSG. The Ti impurity affects the properties of SiC by forming deep levels inside the bandgap, and as thus, reducing the minority carrier lifetime. However, it is difficult to confirm the site preference of Ti in 6H-SiC, since the Ti acceptor level is inactive in 6H-SiC. In this work, a combined photoluminescence (PL) and theoretical calculation study was conducted to research the bonding state of Ti in 6H-SiC. The PL spectra for the Ti-doped 6H-SiC were measured at low temperature, and the corresponding theoretical calculation was performed to confirm the site preference of Ti in 6H-SiC.
Proceedings Inclusion? Planned:
Keywords Ceramics, Computational Materials Science & Engineering, High-Temperature Materials

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Site Preference of Ti in 6H-SiC: A Combined Photoluminescence and Theoretical Calculation Study
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