About this Abstract |
| Meeting |
2026 TMS Annual Meeting & Exhibition
|
| Symposium
|
Chemistry and Physics of Interfaces
|
| Presentation Title |
Effects of Sb Alloying on the Microstructure and Thermoelectric Properties of 5 at. % In-Doped Bi<sub>2</sub>Te<sub>3</sub> |
| Author(s) |
Badie Jubran, Yaron Amouyal |
| On-Site Speaker (Planned) |
Badie Jubran |
| Abstract Scope |
Bismuth-telluride (Bi2Te3) is one of the prominent materials for TE applications near room temperature. We synthesize Bi1.75-xIn0.25SbxTe3 compounds with x =0, 0.05, 0.1, and 0.2 to form second-phase In2Te3 precipitates dispersed in the Bi2Te3-based matrix. We alloy these materials with Sb to control the precipitates’ morphology, thereby manipulating the TE transport properties of the composite. We find that In-alloying forms elongated lamellar In2Te3-precipitates aligned along the Bi2Te3 {0001} basal planes. Upon Sb-alloying, Sb atoms tend to partition to the In2Te3-phase together with preferential substitution for In atoms in the In2Te3-precipitates and for Bi atoms in the Bi2Te3 matrix. This is manifested by increasing the interfacial atomistic mismatch between both phases, inducing lattice strains. For this reason, the precipitates morphology gradually transforms from lamellar to spheroidal with increasing Sb concentration. Our study outlines the dual role of dopants in tailoring both electronic and thermal transport as well as microstructure morphology. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Electronic Materials, Phase Transformations, Thin Films and Interfaces |