| Abstract Scope |
SiC is one of the most important ceramics for applications in extreme radiation environments. Its performance under irradiation is governed by a complex balance among defect production, recombination, migration, clustering, and phase stability. For the honorary symposium celebrating William J. Weber, I will discuss our work on radiation-induced defect evolution in SiC and its implications for predicting long-term materials behavior. Through advanced characterization and modeling, we identify the mechanisms controlling disorder accumulation, defect clustering, loop formation, swelling, and amorphization resistance. The apparent radiation tolerance of SiC emerges from coupled processes occurring across multiple length and time scales. More broadly, it reflects themes central to Professor Weber’s career: the integration of fundamental defect physics, irradiation experiments, and materials characterization to understand radiation effects in ceramics. I will highlight remaining challenges and opportunities for using SiC as both a model system for radiation-damage science and an enabling material for future energy technologies. |