About this Abstract |
| Meeting |
2026 TMS Annual Meeting & Exhibition
|
| Symposium
|
Alloys and Compounds for Thermoelectric and Solar Cell Applications XIV
|
| Presentation Title |
Thermal Stability and Stoichiometric Control in GeTe and SnTe Thin Films |
| Author(s) |
Chun-Yung Huang, Chun-Han Ku, Albert T. Wu |
| On-Site Speaker (Planned) |
Albert T. Wu |
| Abstract Scope |
GeTe- and SnTe-based thermoelectric thin films are attracting increasing attention for mid-temperature energy harvesting due to their promising thermoelectric performance. Compared to bulk thermoelectric materials, thin-film materials offer distinct advantages, including reduced lattice thermal conductivity from enhanced phonon-boundary scattering, tunable microstructure via controlled deposition processes, and better compatibility with microscale device integration. However, for thin-film thermoelectric modules, hot storage serves as a critical test condition for evaluating long-term reliability. Te possess higher vapor pressures, prolonged exposure to elevated temperatures can lead to stoichiometric deviations. This study investigates the thermoelectric properties of GeTe and SnTe films fabricated via co-sputtering under various deposition conditions and subjected to hot storage aging. The results reveal that various types of defects formed during aging significantly affect the carrier concentration and power factor. Understanding and mitigating Te loss remains essential for achieving stable operation in mid-temperature thin-film applications. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Energy Conversion and Storage, Thin Films and Interfaces, |