About this Abstract |
| Meeting |
MS&T22: Materials Science & Technology
|
| Symposium
|
Advances in Emerging Electronic Nanomaterials: Synthesis, Enhanced Properties, Integration, and Applications
|
| Presentation Title |
Area Selective Atomic Layer Deposition of Silicon Oxide Using an Oxygen Plasma or Ozone with Copper as the Nongrowth Surface |
| Author(s) |
Sumit Agarwal |
| On-Site Speaker (Planned) |
Sumit Agarwal |
| Abstract Scope |
Atomic layer deposition (ALD) offers the potential for area-selective deposition of patterned structures to enable a bottom-up fabrication of semiconductor devices. Area-selective ALD can be achieved by selectively attaching a blocking molecule to a specific surface. SiO2 ALD is unique in the sense that O3 or an O2 plasma is preferable for high throughput and a cleaner process: halogenated silane precursors such as SiCl4 along with H2O require a catalyst. The need for O radicals for deposition makes the use of organic blocking layers to inhibit growth challenging as hydrocarbons get rapidly combusted in the presence of O radicals. In this presentation, we we will demonstrate that area-selective ALD of SiO2 with O radicals while inhibiting growth on Cu with fluorinated thiols that are resistant to combustion. |