About this Abstract |
| Meeting |
MS&T25: Materials Science & Technology
|
| Symposium
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TMS Frontiers of Materials Award Symposium: Harnessing Charged and Chemical Defects for Exceptional Structural and Functional Properties
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| Presentation Title |
Atomistic Roughening of μm-Long Dislocation Lines under Electric Fields |
| Author(s) |
Liming Xiong |
| On-Site Speaker (Planned) |
Liming Xiong |
| Abstract Scope |
We will present results from our recent concurrent atomistic-continuum (CAC) simulations to understand how a micrometer-long dislocation line behaves in SrTiO3 when exposed to external stresses and electric fields. Our main findings are: (1) the μm-long edge dislocation line becomes rough when atomic-scale kinks are activated along the lines; (2) its motion leaves vacancies behind with a population of them being proportional to the number of the kinks on the dislocation; (3) the core of a non-moving edge dislocation is positively charged, but will eventually become neutral when it moves and leaves vacancies behind; (4) an external electrical field can be used to harness the edge dislocation motion in SrTiO3 to control its mobility, kink, and vacancy population. These findings suggest that a synergy of mesoscale CAC with high-fidelity experiments will facilitate us to manipulate both dislocation and vacancies in solid oxides using external electrical fields. |