About this Abstract |
| Meeting |
MS&T25: Materials Science & Technology
|
| Symposium
|
Hybrid Organic-Inorganic Materials for Alternative Energy
|
| Presentation Title |
On the Development of High-Performance III-V/Si Tandem Solar Cells: From Materials to Devices |
| Author(s) |
Lauren M Kaliszewski, Tal Kasher, Marzieh Baan, Steven A Ringel, Tyler J. Grassman |
| On-Site Speaker (Planned) |
Tyler J. Grassman |
| Abstract Scope |
Wafer-scale, monolithic, epitaxial III-V/Si integration has been a ‘holy grail’ of (opto)electronics materials research for decades, especially for production of III-V/Si multijunction (“tandem”) solar cells. One promising approach for this is direct heteroepitaxial GaP/Si integration with subsequent GaAs<sub>y</sub>P<sub>1-y</sub> metamorphic grading, enabling both use of active Si subcells and bandgap/lattice constant engineering of target III-V subcells. Despite decades of effort, the current certified AM1.5G records for such cells remain relatively low: 23.4% GaAsP/Si dual-junction (25% uncertified small-area) and 25.9% GaInP/GaAs/Si triple-junction. However, work toward metamorphic III-V/Si platform refinement — development of heteroepitaxial processes and structures yielding dislocation densities ≤ 2×10<sup>6</sup> cm<sup>-2</sup>, device design for optimal performance at realistic defect densities, and advanced high-throughput characterization methods — is bringing high performance within reach. To this end, we will discuss recent work from our group, across the entirely materials to devices spectrum, that is serving to help reduce the performance gap. |