About this Abstract |
| Meeting |
2026 TMS Annual Meeting & Exhibition
|
| Symposium
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Phase Stability in Extreme Environments III
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| Presentation Title |
Limitations in Functional Recovery in Recrystallized GaAs Following Ion-Induced Amorphization |
| Author(s) |
Ellis Rae Kennedy, Adric Jones, Miguel Pena, Hyosim Kim, Yongqiang Wang, Blas Uberuaga, Samuel Greer |
| On-Site Speaker (Planned) |
Ellis Rae Kennedy |
| Abstract Scope |
Ion-irradiated amorphous gallium arsenide (GaAs) undergoes recrystallization during in situ thermal annealing up to 400°C, exhibiting two distinct regimes: low-temperature (<250°C) epitaxial growth preserving substrate orientation, and higher-temperature (>250°C) regrowth dominated by dense {111} nanotwin networks. Four-dimensional scanning transmission electron microscopy (4D-STEM) combined with angular cross-correlation analysis reveals nanoscale structural ordering and paracrystalline motifs, reflecting structural memory within the amorphous phase. Despite enhanced long-range order following recrystallization, electron energy-loss spectroscopy indicates reduced plasmon peak intensity, and positron annihilation spectroscopy identifies increased point defect concentrations relative to crystalline GaAs. These observations suggest that point defects acting as electronic traps significantly hinder functional recovery, outweighing the influence of long-range structural ordering. This study underscores the critical role of defect management in phase stability and recovery dynamics of materials exposed to extreme environments. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Electronic Materials, Characterization, Phase Transformations |