About this Abstract |
| Meeting |
2026 TMS Annual Meeting & Exhibition
|
| Symposium
|
Mechanical Behavior at the Nanoscale VIII
|
| Presentation Title |
Strain-Induced Failure and Interfacial Electronic Anisotropy in Oxidized Silicon Nanowires |
| Author(s) |
Yasir Mahmood, Daniel Wines, Kamal Choudhary, Lucas Hale |
| On-Site Speaker (Planned) |
Yasir Mahmood |
| Abstract Scope |
Silicon nanowires (Si NWs) have emerged as promising candidates for next-generation nanoelectronic devices such as gate-all-around transistors due to their high surface-to-volume ratio, tunable electronic properties, and compatibility with aggressive scaling requirements. Strain engineering further enhances their performance by modulating carrier mobility and transport characteristics. We employ reactive force field molecular dynamics to simulate dry oxidation of Si NWs, capturing interface formation with minimal residual stress. Subsequent uniaxial straining reveals the critical role of the Si-SiO2 interface in dictating the mechanical response and fracture initiation. To dissect strain-induced electronic behavior, the faceted NW is decomposed into planar interfaces aligned with low indexed crystallographic directions, enabling first-principles analysis of anisotropic strain-induced modulation of electronic behavior. Our study links interfacial stress gradients to strength degradation and failure, offering atomistic insights into the mechanical integrity of Si NWs. These findings guide the design of robust core-shell nanostructures for nanoelectronics, and micro/nano-electromechanical systems. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Mechanical Properties, Electronic Materials, Nanotechnology |