About this Abstract |
| Meeting |
MS&T26: Materials Science & Technology
|
| Symposium
|
Advances in Emerging Electronic Nanomaterials: Towards Next-Generation Microelectronics
|
| Presentation Title |
Sub-5nm Thick Plasma-Enhanced Atomic Layer Deposited Indium Oxynitride Channel Transistor for 3D Monolithic Device Applications |
| Author(s) |
Jiyoung Kim, Minjong Lee, DooSan Kim, Soham Shirodkar, Dushyant M. Narayan, Thi Thu Huong Chu |
| On-Site Speaker (Planned) |
Jiyoung Kim |
| Abstract Scope |
Indium-based oxide semiconductors have emerged as promising channels for 3D transistor architectures. In2O3 exhibits excellent drive current; however, hydrogen incorporation causes device instability. Incorporating nitrogen to form indium oxynitride (InON) is expected to enhance mobility while effectively suppressing the formation of hydrogen. Despite these advantages, direct deposition of InON via atomic layer deposition (ALD) is challenging because the bonding dissociation energy of In-O (~346 kJ/mol) is significantly stronger than that of In-N (~186 kJ/mol), making it difficult to incorporate sufficient nitrogen during the simultaneous supply of oxygen and nitrogen reactants. A two-step channel formation strategy will be discussed: the initial deposition of an indium nitride (InN) thin film followed by an oxidation process to convert it into an InON channel layer deposited by Hollow-Cathode Plasma (HCP)-enhanced ALD at 240 °C. An oxide top gate deposition process converted InN into the more robust InON into top-gated (TG) thin-film transistor (TFT) devices. |