About this Abstract |
| Meeting |
2027 TMS Annual Meeting & Exhibition
|
| Symposium
|
Chemistry and Physics of Interfaces
|
| Presentation Title |
Eutectic Silicon Modification Through Impurity-Induced Twinning |
| Author(s) |
Anqi Qiu, Yang Li, Fei Xue, Yang Huo, Mei Li, Yue Fan |
| On-Site Speaker (Planned) |
Anqi Qiu |
| Abstract Scope |
Increasing the density of twins in eutectic silicon improves the mechanical properties of Al-Si alloys. In this study, we investigate the effect of various impurity elements on twinning through atomistic simulations and experimental validation. We evaluate the applicability of the Hellawell impurity-induced twinning criterion, which predicts that an optimal hard sphere radius ratio of approximately 1.65 between the impurity element and silicon promotes twinning. Our results show that while this criterion successfully predicts the modification behavior of certain element groups, it fails for others, indicating that additional factors beyond atomic size govern impurity-induced twinning. In particular, the effect of impurity element clustering is found to play a significant role in modifying twin formation behavior. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Aluminum, Modeling and Simulation, |