About this Abstract |
| Meeting |
MS&T25: Materials Science & Technology
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| Symposium
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Processing and Performance of Materials Using Microwaves, Electric and Magnetic Fields, Ultrasound, Lasers, and Mechanical Work – Rustum Roy Symposium
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| Presentation Title |
Vacuum Melting and Elevated Temperature Forming of High Purity Cu-S Alloy for Semiconductor Interconnect Seed Applications. |
| Author(s) |
Collin Whitt, Eduardo del-Rio |
| On-Site Speaker (Planned) |
Collin Whitt |
| Abstract Scope |
Advanced semiconductor devices with multilayer stacking and low resistance interconnects require the development of alternate copper alloys capable of providing lower contact resistance and improved adhesion properties. Copper sulfur alloys are potential candidates to replace traditional seed layer alloys, yet the poor solubility between Cu and S makes the alloying process challenging. The combination of vacuum induction melting with electromagnetic stirring provides a method to mix and cast CuS and high purity Cu homogeneously without compositional segregation, enabling uniform solute distribution throughout the matrix with limited S evaporation during melting, producing a uniform distribution of S within 0.05wt%. In addition, high temperature and high strain-rate rolling help overcome the low fracture toughness produced by S rich precipitation during solidification. Combined vacuum induction melting and advanced thermo-mechanical processing generate a 99.999% pure Cu-S alloy suitable for physical vapor deposition (PVD) of seed layers for interconnect via filling for advanced semiconductor development. |