About this Abstract |
| Meeting |
MS&T25: Materials Science & Technology
|
| Symposium
|
Energy Materials for Sustainable Development
|
| Presentation Title |
Phonon-Drag-Enhanced Thermoelectric Performance in n-Type Si1-xSnx Epitaxial Layers |
| Author(s) |
Masashi Kurosawa, Tatsuki Oiwa, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka |
| On-Site Speaker (Planned) |
Masashi Kurosawa |
| Abstract Scope |
Thermoelectric (TE) materials that operate efficiently near or below room temperature are essential for energy harvesting and the microscale cooling of lasers in next-generation silicon ultra-large-scale integrated circuits. In particular, phonon-drag effects have recently attracted renewed interest as a promising route to enhance the Seebeck coefficient not only at ultra-low temperatures but also near room temperature. In this study, we report the temperature dependence (5–300 K) of the TE properties of n-type Si0.97Sn0.03 epitaxial layers grown on Si substrates with varying electron concentrations. A giant Seebeck coefficient arising from the phonon-drag effect was observed in Si0.97Sn0.03 layers with high electron concentrations exceeding 1019 cm-3—an effect not seen in heavily doped bulk Si. This resulted in a high power factor of 1.1×103 μW·cm-1·K-2 at 25 K. Furthermore, we found that a significant phonon-drag contribution persists even at 300 K, in contrast to Ge1-xSnx layers grown on GaAs substrates. |