About this Abstract |
| Meeting |
2027 TMS Annual Meeting & Exhibition
|
| Symposium
|
Electronic Packaging and Interconnection Materials IV
|
| Presentation Title |
Low-Temperature Rapid Formation and Diffusion Mechanism of Co-Sn Full-IMC Interconnects for Power Electronic Packaging |
| Author(s) |
Fu Guo, Shuang Liu |
| On-Site Speaker (Planned) |
Fu Guo |
| Abstract Scope |
Full-intermetallic compound (full-IMC) interconnects are attractive for power electronic packaging because they combine low-temperature processing with high-temperature stability. However, conventional Cu-Sn and Ni-Sn transient liquid phase bonding systems generally require prolonged bonding near the melting point of Sn to complete full-IMC conversion. Here, we report a Co-Sn TLP bonding strategy for rapid formation of full-IMC joints at 240 ℃. A continuous and dense CoSn3 bonding layer was obtained within 10 min, while Cu-Sn and Ni-Sn reference joints showed much slower Sn consumption. Microstructural characterization confirmed a predominantly CoSn3 interconnect with no detectable residual Sn, and shear testing demonstrated favorable room-temperature mechanical performance. First-principles calculations indicate that Sn migration in α-CoSn3 is facilitated by a low-barrier Sn1-Sn2 bridge-hopping pathway and higher vacancy-normalized hopping diffusivity than in η'-Cu6Sn5 and Ni3Sn4. These findings highlight Co-Sn TLP bonding as a promising route for full-IMC interconnects in advanced power modules. |
| Proceedings Inclusion? |
Planned: TMS Journal: Journal of Electronic Materials |
| Keywords |
Joining, Thin Films and Interfaces, |