| Abstract Scope |
Advances in thin film growth techniques, which allow for the precise layer-by-layer growth of epitaxial materials, have opened the door to discoveries not previously achievable through bulk synthesis. Pertinent examples include emergent phenomena at oxide heterointerfaces such as two-dimensional electron gases, interfacial superconductivity and novel magnetic properties. In this presentation, I will discuss our use of first principles calculations to explore how the character of heterostructure interfaces can be used to influence material stability and functionality. I will illustrate the role that charge transfer plays in driving magnetism and anomalous dielectric responses at oxide interfaces, and how these can be modulated through chemical identity and interface disorder. Collectively, these results demonstrate unprecedented control over interfacial charge and spin, creating a new avenue for a wide range of applications such as in oxide electronics. This work was supported by the U.S. DOE, Office of Science, BES, MSED using NERSC resources. |