About this Abstract |
| Meeting |
2027 TMS Annual Meeting & Exhibition
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| Symposium
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Four-Dimensional Scanning Transmission Electron Microscopy (4D STEM) for Quantitative Materials Characterization
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| Presentation Title |
Quantitative 4D-STEM Strain Mapping of Multilayer Ferroelectric Thin Films |
| Author(s) |
Paria Gharavi |
| On-Site Speaker (Planned) |
Paria Gharavi |
| Abstract Scope |
Local strain plays a critical role in determining polarization switching, interfacial coupling, and functional reliability in multilayer ferroelectric thin films, yet its quantitative measurement at buried interfaces remains challenging. This work demonstrates the application of four-dimensional scanning transmission electron microscopy (4D-STEM) to quantitatively map nanoscale strain distributions across complex ferroelectric heterostructures. Pixelated diffraction datasets are analyzed using nanobeam electron diffraction to extract full strain tensor components with high spatial resolution, enabling direct visualization of lattice mismatch, strain relaxation, and localized distortions across multiple interfaces. The resulting strain maps reveal heterogeneities that are inaccessible using conventional diffraction techniques and provide new insight into the relationship between local crystallographic distortions and ferroelectric functionality. This study highlights the capability of 4D-STEM as a quantitative characterization tool for investigating buried interfaces and complex strain states in advanced electronic materials, providing a framework for microstructure-driven optimization of multilayer ferroelectric devices. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Electronic Materials, Characterization, Thin Films and Interfaces |