About this Abstract |
| Meeting |
2026 TMS Annual Meeting & Exhibition
|
| Symposium
|
2D Materials – Preparation, Properties, Modeling & Applications
|
| Presentation Title |
2D Dislocation Loop Networks Created by Implantations of Ar, Er and O and its Effect on Light Emission |
| Author(s) |
Sufian Abedrabbo, Yongqiang Wang, Michael PETTES |
| On-Site Speaker (Planned) |
Sufian Abedrabbo |
| Abstract Scope |
Silicon indirect bandgap has been a hampering point in realizing efficient bandgap emission. In this work, we report the formation of various 2D dislocation loop networks that are formed by implanting 4-different fluences of Ar in one group and separately co-implantation 4-doses of Er and O in another group including three types of prime grade Cz-Si: p-type and n-type and FZ. The objective of this study is to monitor the effect of these 2D-structures on the Si-bandgap as well as harvesting light from the impurity centers as in the case of the Er-O implanted samples. It is theorized that the dislocation loops modulate the Si-bandgap leading to correlating the e-h generated carriers in a methodology that trims the 3-particle interaction to 2-particles, thus shielding the carriers from non-radiative recombination paths leading to improved light emission. The presentation will include RT-photoluminescence, TEM and micro-Raman. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Electronic Materials, Characterization, Nanotechnology |