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Meeting MS&T26: Materials Science & Technology
Symposium Advances in Emerging Electronic Nanomaterials: Towards Next-Generation Microelectronics
Presentation Title Wafer-Scale 2D Semiconductors Integrated on Arbitrary Substrates for Emerging Optoelectronic Artificial Synapses with Flexoelectricity
Author(s) Yeonwoong Jung
On-Site Speaker (Planned) Yeonwoong Jung
Abstract Scope I will discuss my group’s recent efforts in manufacturing wafer-scale 2D transition metal dichalcogenide (TMD) layers on arbitrary substrates and exploring their opportunities in emerging technologies. Wafer-scale 2D TMD semiconducting layers are integrated on flexible polyamide (PIs) in two different approaches of direct growth and water-assisted delamination determined by their growth conditions. A number of unconventional devices are demonstrated with them, and two representative examples of optoelectronic synapses with flexoelectricity will be discussed. Specifically, 2D platinum diselenide (PtSe2) on PIs are demonstrated to exhibit a comprehensive set of synaptic characteristics originated from their wavelength tunable bi-directional photoconductivity; i.e. fully optical operation of potentiation/depression enabling basic logic functions even under mechanical bending. The devices are further demonstrated to realize bending orientation-dependent current modulations; i.e., current increase/decrease upon convex/concave bending, respectively. The observed phenomena are discussed based on the persistent photocurrent (PPC) effect and the bandgap modulating flexoelectricity of 2D PtSe2 layers.

OTHER PAPERS PLANNED FOR THIS SYMPOSIUM

4D-STEM and Machine Learning for Nanoscale Structure-Property Mapping in Emerging Electronic Materials
A General Process to Produce Large-Size Single Crystal Room-Temperature Diluted Magnetic Semiconductors
Atomic-Resolution Imaging of Ferroelectric Domains in Emerging Fluorite-Type Ferroelectrics
Bio-Inspired Event-based Infrared Vision Enabled by Colloidal Quantum Dots
Effects of Ta Crystalline Phase on Ultrathin TaOx Neuromorphic Devices
Electronics Enabled by Mechanical Metamaterials
Engineered Transparency and Conductivity of IZO/Ag/IZO Multilayers by Intense Pulsed Light for Perovskite Solar Cells
Fabrication and Characterization of SnO2/CdS Quantum Dots Heterojunction for UV-Vis Sensitive Low-Voltage Phototransistors
Heterogeneous Integration Using Freestanding Gallium Nitride Membranes
Inverse-Designed 3D Holographic Lithography for Next-Generation Microelectronic Architectures
Ion Beam Treatment to Control Properties of Two-Dimensional Semiconductors
Large-Scale, Crack-Free Oxide Membranes for Tunable Twistronics
Laser-Engineered Graphene Composites for Emerging Electronic Nanomaterials
Metal Nanowire-Based Electrodes and Their Applications in Optoelectronics and Bioelectronics
Mxene-enabled Micro-Battery Architectures for Advanced Semiconductor Devices
Scaling and Integration of Hafnia-Based Ferroelectrics for High-Density and Neuromorphic Applications
Spatiotemporal Laser Control of Iron-Oxide-Nanoparticle-Integrated Graphene Microelectrodes for Bioelectronic Sensing
Sub-5nm Thick Plasma-Enhanced Atomic Layer Deposited Indium Oxynitride Channel Transistor for 3D Monolithic Device Applications
Thermodynamic Modeling and CVD Synthesis of Mo, Nb, and V MXene Precursors
Topological Semimetal and Single-Crystalline Cu for Overcoming Resistivity Scaling in Nanoscale Interconnects
Toward Controlled Synthesis of 2D Materials: Data-Driven Modeling of ALD Growth Mechanisms
Wafer-Scale 2D Semiconductors Integrated on Arbitrary Substrates for Emerging Optoelectronic Artificial Synapses with Flexoelectricity
Field Gradient Engineering of van der Waals Semiconductors

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