About this Abstract |
| Meeting |
2027 TMS Annual Meeting & Exhibition
|
| Symposium
|
Four-Dimensional Scanning Transmission Electron Microscopy (4D STEM) for Quantitative Materials Characterization
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| Presentation Title |
Atomic Level Interfacial 4D-STEM Characterization of Annealed Ferroelectric HZO Thin Films |
| Author(s) |
Eric Stickley, Nima Noei, Erfan Shabani, Paria Gharavi, Elaheh Ahmadi |
| On-Site Speaker (Planned) |
Eric Stickley |
| Abstract Scope |
Ferroelectric hafnium zirconium oxide (HZO) is a promising material for ferroelectric devices, sensors, and neuromorphic computing technologies due to its relatively high remanent polarization, coercive field, and curie temperature. Achieving optimal ferroelectric performance requires precise control over the atomic-level behavior present at the substrate-film interface, but the interfacial evolution from amorphous HZO to crystalline HZO remains insufficiently understood. Here, advanced four-dimensional scanning transmission electron microscopy (4D-STEM) characterization techniques are employed to directly compare the crystallinity and interfacial physics of unannealed HZO and annealed HZO. This study offers insights into defect formation, crystallographic orientation, and strain distribution, establishing structure-property relationships that can guide the optimization of HZO films for next-generation ferroelectric devices. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Characterization, Thin Films and Interfaces, Electronic Materials |