About this Abstract |
| Meeting |
2027 TMS Annual Meeting & Exhibition
|
| Symposium
|
Computational Discovery and Design of Materials
|
| Presentation Title |
Machine Learning Screening of Oxide Semiconductors for Energy-Efficient Back-End Transistors |
| Author(s) |
Yash Gupta, Sai Siddhardha Singamaneni, Aryan Gupta |
| On-Site Speaker (Planned) |
Sai Siddhardha Singamaneni |
| Abstract Scope |
AI and data-center workloads are pushing chip energy demand toward unsustainable levels. Recent IEDM work showed amorphous indium oxide grown near 150 C and integrated into back-end transistors, where shorter data paths reduce switching energy. Because that result was experimental, any screening model should reproduce it before extrapolating. We test that directly. From JARVIS-DFT we use 25,194 oxides of real first-principles data and screen the 12,804 with computed bandgaps. A composition is favorable when a TBmBJ gap at or above 2.5 eV pairs with an electron effective mass at or below 0.4 m0. Among the 548 oxides with effective masses, 14 percent satisfy both criteria. A 145-feature composition-only classifier then ranks the space, and grouped five-fold cross-validation gives ROC-AUC 0.89, with precision of 1.0 at 20 and 0.70 at 50. The result is a validated, interpretable enrichment of oxide candidates for low-energy electronics. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Computational Materials Science & Engineering, Machine Learning, Electronic Materials |