About this Abstract |
| Meeting |
2026 TMS Annual Meeting & Exhibition
|
| Symposium
|
Chemistry and Physics of Interfaces
|
| Presentation Title |
Quantifying the dislocation content of atomically resolved grain boundary line defects using the Nye tensor |
| Author(s) |
Ian Winter, Alejandro Hinojos, Douglas Medlin |
| On-Site Speaker (Planned) |
Ian Winter |
| Abstract Scope |
Line defects existing at grain boundaries have been shown to play an important role in grain boundary motion. As a result, there is an interest in understanding the structure of these defects. Using transmission electron microscopy, line defects in grain boundaries can be resolved at the atom-level, but the further characterization of line defects using approaches such as circuit mapping remains a manual, often painstaking, process.
We present a method that employs the Nye tensor to characterize the edge dislocation content of line defects at grain boundaries from atomic-resolution images. This approach enables us to rapidly characterize all dislocation content along a grain boundary. Additionally, the Nye tensor provides information about the line defects’ core structure. We demonstrate this method on two exemplar defects: a facet junction and twin boundary disconnection in face-centered cubic Au. SNL is managed and operated by NTESS under DOE NNSA contract DE-NA0003525. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Thin Films and Interfaces, |