About this Abstract |
| Meeting |
2026 TMS Annual Meeting & Exhibition
|
| Symposium
|
Electronic Packaging and Interconnection Materials III
|
| Presentation Title |
Effect of Ni Addition on Resistivity and Electromigration Resistance in Co Thin Films |
| Author(s) |
Euimin Cheong, Donghyun Park, Eunhee Lim, Yongin Yun, Hyunsun Song, Jaeseong Lee, Dongwoo Lee |
| On-Site Speaker (Planned) |
Euimin Cheong |
| Abstract Scope |
To overcome the limitations of pure cobalt (Co) interconnects in terms of resistivity and electromigration (EM) reliability, we introduced a small amount of Ni into Co using combinatorial magnetron sputtering. Resistivity measurements using a 4-point probe showed a ~15% reduction compared to pure Co. The selected samples demonstrated longer mean time to failure (MTTF) and higher activation energy under EM stress. As SEM and XRD analyses revealed no substantial grain size change, the observed improvements are attributed to mechanisms other than conventional grain growth. Further investigations are underway, including grain boundary analysis via TEM and additional characterization to explore possible mechanisms influencing the observed properties. In this presentation, we demonstrate that Ni alloying can beneficially influence microstructural or interfacial characteristics, thereby improving electrical performance and EM reliability. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Characterization, Copper / Nickel / Cobalt, Electronic Materials |