About this Abstract |
| Meeting |
MS&T26: Materials Science & Technology
|
| Symposium
|
Advances in Emerging Electronic Nanomaterials: Towards Next-Generation Microelectronics
|
| Presentation Title |
Atomic-Resolution Imaging of Ferroelectric Domains in Emerging Fluorite-Type Ferroelectrics |
| Author(s) |
Ece Gunay, Sebastian Calderon, Rintaro Maki, Yuichi Shimakawa, Daisuke Kan, Elizabeth Dickey |
| On-Site Speaker (Planned) |
Ece Gunay |
| Abstract Scope |
Logic-in-memory architectures reduce the energy cost of data-intensive computing by combining computation and storage, but they require scalable ferroelectric materials compatible with CMOS technology. Y-doped hafnium oxide is a promising candidate because yttrium stabilizes the metastable ferroelectric orthorhombic phase. To probe nanoscale structures and domain configurations that govern device performance, freestanding Hf0.93Y0.07O2 membranes with predominantly in-plane polarization were prepared for atomic-resolution characterization. Using aberration-corrected scanning transmission electron microscopy (STEM), we identified nanoscale tetragonal-like inclusions preferentially located near grain boundaries and 90° domain walls. These heterogeneities preserve the overall lattice while exhibiting local in-plane distortions that influence the functional properties and reliability of hafnia-based emerging ferroelectrics.
(This material was based upon work supported by the Center for 3D Ferroelectric Microelectronics Manufacturing (3DFeM2), an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences Energy Frontier Research Centers program under Award Number DE-SC0021118.) |