About this Abstract |
| Meeting |
2027 TMS Annual Meeting & Exhibition
|
| Symposium
|
Enabling Nuclear Materials Innovation via the Nuclear Science User Facility Capabilities
|
| Presentation Title |
Investigations on the Electrical and Thermal Properties of Chemical Vapor Deposited Nitrogen and Neutron Transmutation Doped (NTD) Phosphorus in β-SiC. |
| Author(s) |
J. Rory Kennedy |
| On-Site Speaker (Planned) |
J. Rory Kennedy |
| Abstract Scope |
Silicon carbide (SiC) is a wide bandgap semiconductor. Cubic 3C- or β-SiC has the smallest bandgap of all the known SiC polymorphs. Under a predominately thermal neutron spectrum as found in a commercial PWR, 31Si will transmute to 31P thereby n-doping the SiC in a process known as neutron transmutation doping (NTD). Alternately, the β-SiC can be n-doped with nitrogen pre-irradiation via chemical vapor deposition (CVD). Although n-doping can increase the electrical conductivity of semiconductor materials and by that also potentially increase the thermal conductivity vie enhanced contribution by the electronic mechanism, the introduction of impurity defects will have the opposite effect. Additional defect formation while in-reactor under neutron irradiation will introduce irradiation induced defects with further detrimental effects. Studies to investigate the fundamentals of the competition between these two opposing effects will be presented. |
| Proceedings Inclusion? |
Planned: |