About this Abstract |
| Meeting |
MS&T25: Materials Science & Technology
|
| Symposium
|
TMS Frontiers of Materials Award Symposium: Harnessing Charged and Chemical Defects for Exceptional Structural and Functional Properties
|
| Presentation Title |
Nanoscale evaluation of light illumination effect on dislocation behavior in III-V group semiconductors by photoindentation |
| Author(s) |
Ryosuke Kinoshita, Yan Li, Hiroto Oguri, Eita Tochigi, Atsutomo Nakamura |
| On-Site Speaker (Planned) |
Ryosuke Kinoshita |
| Abstract Scope |
It has been recognized that the light environment can have a significant impact on the mechanical properties of compound semiconductors. A notable example is the exceptional room-temperature plasticity of ZnS crystals in darkness, which were typically brittle under regular light. Such an influence of light on the deformation behavior is believed to result from the interaction between dislocations and photo-excited carriers. In this study, we investigate the effects of light on the dislocation behavior in III-V group semiconductors, gallium nitride (GaN) and gallium phosphide (GaP), using “photoindentation” method. Photoindentation is a quantitative nanoscale characterization method that incorporates nanoindentation and a fully controlled light irradiation system. Two types of nanoindentation tests revealed the different effects of light on dislocation nucleation and glide. |