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Meeting MS&T25: Materials Science & Technology
Symposium Energy Materials for Sustainable Development
Presentation Title Design and development of segmented Mg3(Sb, Bi)2 -based thermoelectric devices
Author(s) JAYACHANDRAN BABU, Raju Chetty, Takao Mori
On-Site Speaker (Planned) JAYACHANDRAN BABU
Abstract Scope Mg3Sb2-Mg3Bi2 solid solutions are potential candidates for low-to-medium temperature thermoelectric power generation. Previous studies suggest doped n-type Sb-rich Mg3Sb1.5Bi0.5 compositions are superior in the medium temperature (600-800 K), whereas Bi-rich Mg3Bi1.5Sb0.5 compositions show peak performance below 550 K. Segmenting Sb-rich and Bi-rich Mg3(Sb, Bi)2 compounds is a potential method to improve the conversion efficiency of Mg3Sb1.5Bi0.5 TE devices. In this study, we developed a one-step technique to segment Mg3Sb1.5Bi0.5 and Mg3Bi1.5Sb0.5 using a thin metal foil contact layer. Low contact resistivities (< 10 μΩ.cm2) were observed at the Mg3Sb1.5Bi0.5/Mg3Bi1.5Sb0.5 junctions. The segment-height-ratio optimisation was carried out using the finite element method to maximise the efficiency gain from segmentation. The efficiency evaluation of single and multi-segment Mg3(Sb, Bi)2 TE legs confirms the effectiveness of segmentation in improving the TE conversion efficiency. The construction, one-step segmentation process optimisation, and performance evaluation of Mg3(Sb, Bi)2 segmented devices will be discussed in detail.

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