About this Abstract |
| Meeting |
Materials in Nuclear Energy Systems (MiNES) 2025
|
| Symposium
|
Materials in Nuclear Energy Systems (MiNES) 2025
|
| Presentation Title |
Ion-Induced Defects and Recovery in Semiconductors: An Atomistic Modeling Perspective |
| Author(s) |
Eva Zarkadoula, Iancu Decebel, Andrei Hotnog, Yanwen Zhang, William Weber, Gihan Velisa |
| On-Site Speaker (Planned) |
Eva Zarkadoula |
| Abstract Scope |
Understanding defect formation and recovery processes in semiconductors is essential for their use in sensing and electronic applications exposed to energetic particles. Materials such as Si, Ge, and Ga₂O₃ exhibit distinct responses to ion irradiation due to differences in bonding, structure, and defect dynamics. In this presentation, I will use molecular dynamics simulations to examine how energetic ions interact with these semiconductors across a range of conditions. I will discuss primary damage mechanisms—such as displacement cascades, point defect production, and short-timescale amorphization—as well as the early stages of defect annealing. Emphasis will be placed on how material-specific features influence both defect creation and recovery, and how these insights compare with experimental observations. Together, these results help clarify the microscopic origins of radiation response in semiconductors relevant to advanced electronic and sensing applications.
Work was supported by the Center for Nanophase Materials Sciences, a US Department of Energy, Office of Science User Facility at Oak Ridge National Laboratory. |
| Proceedings Inclusion? |
Undecided |