| Abstract Scope |
To enhance the semiconductor properties of polymer-derived ceramic SiOC and gain high-performance pressure-temperature dual sensing capabilities, Al and Ni were doped to the precursor solution through polymerization reactions. The customized re-entrant and tetrachiral honeycomb negative Poisson's ratio structures fabricated via digital light processing printing technology lay the foundation of mechanical properties and piezoresistivity for SiOC. The addition of Al and Ni facilitates the phase transition from SiOC to SiO2, SiC, and C, thus increasing the content of conductive phases and the conductivity achieves 1.05 and 0.27 S/m. Meanwhile, the energy band arrangement is adjusted to favorable for charge transfer. The obtained maximum piezoresistivity is 75.44% (SiAlOC) and 78.31% (SiNiOC), and its performance hardly changed after 300 times and 500 times cycling tests. Additionally, both SiOC and modified ceramic exhibit negative temperature coefficient characteristics, SiOC is appropriate for the Steinhart-Hart equation while SiAlOC (SiNiOC) is more suitable for the thermistor equation. |