| Abstract Scope |
To meet the growing demands for low-latency storage, reduced cost-per-bit and optimized data processing, there is a pressing need for innovation in memory technology. Accessing multiple non-volatile states with ferroelectric-based devices offers a compelling solution. However, in most cases, the switching of polarization to access multistate memory levels is controlled by the application of a DC electric field. This limits the speed of switching to nanosecond (ns) timescales. In this work, we demonstrate the switching of the polarization in the PbTiO3 layers having a staggered vortex configuration by applying a THz pulse which can lead to switching on the order of picoseconds (ps) and lead to ultrafast switching from one memory state to another. The straightforward method for achieving ferroelectric multi-level polarization states and switching on the order of ultrafast timescales in our work offers a promising solution for its practical applicability in devices. |