About this Abstract |
| Meeting |
MS&T25: Materials Science & Technology
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| Symposium
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TMS Frontiers of Materials Award Symposium: Harnessing Charged and Chemical Defects for Exceptional Structural and Functional Properties
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| Presentation Title |
Exploring Photoplastic and Electroplastic Phenomena in ZnS by Misfit Dislocation Imaging |
| Author(s) |
Alexandra Fonseca Montenegro, Sevim Genlik Polat, Md Mohsinur Rahman Adnan, Maryam Ghazisaeidi, Roberto Myers |
| On-Site Speaker (Planned) |
Roberto Myers |
| Abstract Scope |
The phenomena of giant photoplasticity is predicted to arise from a strong increase of the Peierls barrier due to electron trapping and subsequent bond reconstruction in the core of Zn-core dislocations. We experimentally test these predictions in epitaxial ZnS grown on GaP, which contain strain-relieving dislocations along the heterointerface. The strain and symmetry of the epilayer geometrically dictate the core-composition of interface (misfit) dislocations, such that their line direction reveals the core composition, Zn+ or S-. These dislocation networks are imaged using electron channeling contrast imaging (ECCI) in a scanning electron microscope (SEM), which enables statistical analysis of the dislocation networks formed by threading dislocation glide. The observed glide anisotropy (Zn vs S core) is interpreted to arise from a Peierls barrier anisotropy. This approach can be used to explore photo and electro sensitivity of threading dislocation glide in ZnS through dislocation imaging and strain-relaxation anisotropy, enabling measurements of optical and electronic sensitivity of dislocations in well-controlled epitaxial heterostructures. |