About this Abstract |
| Meeting |
2027 TMS Annual Meeting & Exhibition
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| Symposium
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Radiation Effects in Solid-State Materials: An SMD Symposium Honoring William J Weber
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| Presentation Title |
Influence of Ion Velocity over Ionization-induced Defect Recovery in Ge |
| Author(s) |
Andrei-Theodor Hotnog, Decebal Iancu, Radu-Florin Andrei, Eva Zarkadoula, Alexandre Boulle, Yanwen Zhang, William J. Weber, Gihan Velișa |
| On-Site Speaker (Planned) |
Andrei-Theodor Hotnog |
| Abstract Scope |
The velocity effect conventionally refers to the observation that ions with identical electronic stopping power can produce different damage levels because their velocities determine the volume in which energy is deposited. Higher‑velocity ions transfer energy to electrons over a larger region reducing the local energy density available for damage creation [Toulemonde et. al., NIM B 277 (2012)]. This concept is equally relevant when considering ionization‑induced recovery of lattice disorder. In this study, crystalline Ge is irradiated at room temperature first with 1.2MeV Au to a relative disorder of ~0.9, then with O and Si in the 0.375–0.75 MeV/u range. These subsequent irradiations lead to substantial defect recovery, ultimately reducing disorder below the detection limit of RBS/C [Velişa et al., Adv. Sci.12 (2025)]. Recovery cross‑sections are extracted and analyzed as a function of ion energy, highlighting the role of velocity in ionization‑driven annealing. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Electronic Materials, Characterization, |