About this Abstract |
| Meeting |
2027 TMS Annual Meeting & Exhibition
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| Symposium
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Phase Stability, Phase Transformations, and Reactive Phase Formation in Electronic Materials XXVI
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| Presentation Title |
Effect of Annealing on Microstructure in a Zr-Based Thin-Film Metallic Glass Diffusion Barrier and Interfacial Reactions during Cu/Sn/Cu Thermocompression Bonding |
| Author(s) |
Yun-Jhen Hsieh, Zhen-Yi Wu, Hao-Ying Lin, Ming-Tzer Lin |
| On-Site Speaker (Planned) |
Yun-Jhen Hsieh |
| Abstract Scope |
This study investigates the influence of microstructural evolution in a Zr₆₉Cu₂₄Ti₇ thin-film metallic glass (TFMG) diffusion barrier before and after annealing-induced crystallization on interfacial reactions in Cu/Zr-TFMG/Cu/Sn thermocompression bonding. The films were annealed in an argon atmosphere at 450, 480, and 510°C to induce different degrees of crystallization, followed by thermocompression bonding at 275°C. XRD results show that the as-deposited film is mainly amorphous; with increasing annealing temperature, the amorphous halo gradually disappears and distinct crystalline diffraction peaks emerge. After annealing at 510°C, the film exhibits highly crystallized features with oxide phases including ZrO₂ and Cu₂O. Cross-sectional microstructural analysis indicates that the barrier performance of Zr-TFMG is closely associated with amorphous structural stability. Crystallization promotes Cu-Sn intermetallic compound formation by providing grain-boundary diffusion paths for Cu, whereas oxide phases locally suppress diffusion, leading to partial degradation rather than complete barrier failure. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Thin Films and Interfaces, Joining, Other |