About this Abstract |
| Meeting |
2027 TMS Annual Meeting & Exhibition
|
| Symposium
|
Radiation Effects in Solid-State Materials: An SMD Symposium Honoring William J Weber
|
| Presentation Title |
Recovery processes in irradiated silicon |
| Author(s) |
Kai Nordlund, Flyura Djurabekova, Fanhao Kong, Federico Ledda |
| On-Site Speaker (Planned) |
Kai Nordlund |
| Abstract Scope |
It is well established that at temperatures above room temperature, damage in semiconductors can recovers even during the irradiation. This has been shown e.g. by experiments of Weber et al and molecular dynamics simulations by Caturla et al. The mechanisms of recovery below room temperature are less well understood. We have recently examined this issue systematically, motivated by observations of a mysterious excess energy release in new types of dark matter detectors. To be able to simulate even cryogenic temperatures, we augmented our simulations with a special thermostat that describes the effect of quantum mechanical zero point vibrations on atomic motion. With this model, we have shown that radiation-induced damage pockets in silicon can anneal even at temperatures of only 50 mK. We have also shown that these annealing gives energy release events very similar to those in dark matter detectors [1].
1. Phys. Rev. Materials 9, 113603 (2025) |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Computational Materials Science & Engineering, Nuclear Materials, Surface Modification and Coatings |