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Meeting MS&T22: Materials Science & Technology
Symposium Advances in Emerging Electronic Nanomaterials: Synthesis, Enhanced Properties, Integration, and Applications
Presentation Title First-Principles Studies of Atomic Layer Deposition
Author(s) Lan Li
On-Site Speaker (Planned) Lan Li
Abstract Scope The nucleation mechanism for atomic layer deposition (ALD) of transition metal dichalcogenides (TMDs) has been studied using first-principles density functional theory-based methods. ALD is the self-limiting process that can deposit a range of materials at the nanoscale while maintaining chemical stoichiometry and atomic scale thickness control. It can also conform to high-aspect ratio substrate design. We found that ALD is sensitive to surface chemistry and morphology. This presentation will discuss the controlling factors for the ALD of MoS2 molybdenum disulfide – the most common TMD compound used in electronic devices. The role of surface hydroxyl group, precursor-substrate reaction, and MoS2 nucleation mechanism will be also presented.

OTHER PAPERS PLANNED FOR THIS SYMPOSIUM

Applications of Electron Spectro-microscopy to Investigations of Chemistry and Electronic Structure of 2D Materials
Area Selective Atomic Layer Deposition of Silicon Oxide Using an Oxygen Plasma or Ozone with Copper as the Nongrowth Surface
Area Selective Deposition of TaN for Back End of the Line Applications
Correlative Analyses of Low-dimensional Materials
First-Principles Studies of Atomic Layer Deposition
From Atomic-scale Characterization to Atomic-scale Control of Thin Film Deposition Processes
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H-2: Optical Engineering of Pbs Colloidal Quantum Dot Solar Cells Via Fabry-Perot Resonance and Distributed Bragg Reflectors
H-4: Study on Nanostructured Molybdenum Carbide for Hydrogen Evolution Reaction
H-5: Toward Scalable Fabrication of Stable Metal Halide Perovskite Solar Cells Through Inkjet Printing and Antisolvent Bathing
How to Achieve State-of-the-art Heterostructures from Polymer-contaminated Graphene?
Hybrid Liquid Metal Nanostructures for Electronics and Energy Applications
Ions in PEALD Processes: from Material Modification to Selective Deposition
Meta-Stable Phase Ferroelectric HfZrO2 Films
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Molecular Modeling of Atomic Layer Etching
Nanomaterials for Energy-efficient Memory Devices
Nanomolding of Topological Nanowires
Near-Band-Edge Enhancement in Perovskite Solar Cells via Tunable Surface Plasmons
Novel Dirac-source Cold Carrier Injection for Energy-efficient 2D Nanoelectronics
Raman Spectroscopy Studies of Magneto-optical Effects in CrI3
Resolving the Evolution of Atomic Layer Deposited Thin Film Growth by Continuous In Situ X-ray Absorption Spectroscopy
Solution Processible Carbon Precursors for 2D Amorphous Carbon Dielectric
Stable Perovskite Solar Cells
Synthesis and Integration of Transition Metal Dichalcogenides
Synthesis of Atomically Precise Graphene Nanoribbons with Tunable Electronic Properties
Synthesis, Nanofabrication and Characterization of 2D Magnetic Semiconductors for Magnetic Tunnel Junctions
Two Dimensional Materials for Neuromorphic Computing
Unique Molecular Approach to 2D Tin Chalcogenide Materials by Single-Source Precursor Design
Wafer-scale Heterogeneous Integration of Atomically Thin Electronic Materials on Arbitrary Substrates toward Mechanically Reconfigurable Devices
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