About this Abstract |
| Meeting |
2026 TMS Annual Meeting & Exhibition
|
| Symposium
|
Alloys and Compounds for Thermoelectric and Solar Cell Applications XIV
|
| Presentation Title |
B-37: Boosting Electrical Conductivity of p-Type Bi2Te3 Through Defect Engineering and Phonon Scattering Regulation |
| Author(s) |
Cheng-Yu Tsai, Hsin-Jay Wu |
| On-Site Speaker (Planned) |
Cheng-Yu Tsai |
| Abstract Scope |
In this work, the thermoelectric performance of p-type Bi2Te3 is significantly improved by finely tuning the dopant concentration via controlled defect engineering strategies. Structural characterization and first-principles calculation indicate that dopant atoms preferentially occupy the Van der Waals gaps in the crystal structure. This result leads to a substantial enhancement in electrical conductivity, resulting in a peak power factor of 11 mWm-1K-2 and an increased figure of merit (zT) of 1.6 at 303 K. Additionally, a thermoelectric single-leg module fabricated from lightly doped Bi2Te3 reaches a notable energy conversion efficiency of 3.3% under a 150 K temperature difference. These results demonstrate that lightly doped Bi2Te3 highlights the effectiveness of defect modulation as a key design approach in next-generation thermoelectric materials. |
| Proceedings Inclusion? |
Planned: |