About this Abstract |
| Meeting |
2026 TMS Annual Meeting & Exhibition
|
| Symposium
|
Recent Advances in Electron Back-Scattered Diffraction and Related Techniques
|
| Presentation Title |
Towards Absolute Non-Simulation-Based HR-EBSD on Single Experimental Patterns, by Means of Excess-Deficiency Correction |
| Author(s) |
Lloyd Dodsworth, Tijmen Vermeij, Aimo Winkelmann, René de Kloe, Johan P.M. Hoefnagels |
| On-Site Speaker (Planned) |
Lloyd Dodsworth |
| Abstract Scope |
Recently, Vermeij et al. (Scripta Materialia, 2019) proposed a non-simulation-based absolute HR-EBSD framework enabling sub-micron spatial resolution stress/strain measurements with <20 MPa accuracy and simultaneous determination of pattern center (PC), detector distance (DD), and crystal orientation. However, this was demonstrated only on dynamically simulated patterns, with experimental patterns a >50-fold accuracy reduction was observed. Through strain error and residual analyses using simulated and experimental data, the excess-deficiency (E/D) effect was identified as the primary accuracy limitation. We present a novel integrated E/D correction HR-EBSD approach using direct electron detector patterns, based on iterative optimization of scaling and blurring of the vertical gradient to approximate and correct the E/D effect. Additionally, regions with large E/D effects were excluded, guided by experimental setup considerations. Using a single pattern per measurement, an experimental case study on strain-free silicon demonstrated strain errors below 6e-4, confirming accurate simultaneous determination of PC, DD, orientation, and stress. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Characterization, Mechanical Properties, |