About this Abstract |
| Meeting |
MS&T25: Materials Science & Technology
|
| Symposium
|
TMS Frontiers of Materials Award Symposium: Harnessing Charged and Chemical Defects for Exceptional Structural and Functional Properties
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| Presentation Title |
Understanding recombination-enhanced dislocation processes for semiconductor optoelectronics |
| Author(s) |
Kunal Mukherjee |
| On-Site Speaker (Planned) |
Kunal Mukherjee |
| Abstract Scope |
Emerging applications in integrated photonics require the integration of III-V semiconductor lasers and detectors directly onto silicon substrates. However, lattice and thermal expansion mismatch between these materials introduce a high density of dislocations in the III-V layers, degrading device performance. We grow GaAs-on-Si thin films and investigate the behavior of dislocations under device operation. We show that carrier injection drives dislocation glide and climb even at room temperature, ultimately leading to device failure. This motion is fueled by nonradiative recombination of the injected electrons and holes. By alloying GaAs with indium and incorporating InAs quantum dots, we harden the lattice and reduce nonradiative recombination, effectively mitigating dislocation motion. These findings advance our understanding of recombination-enhanced dislocation motion and open pathways to reliable III-V optoelectronics on silicon. |