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Meeting MS&T26: Materials Science & Technology
Symposium Advances in Emerging Electronic Nanomaterials: Towards Next-Generation Microelectronics
Presentation Title A General Process to Produce Large-Size Single Crystal Room-Temperature Diluted Magnetic Semiconductors
Author(s) Limin Cao, Min Feng
On-Site Speaker (Planned) Limin Cao
Abstract Scope Among the longstanding efforts to realize room-temperature (RT) magnetic semiconductors, dilute incorporation of magnetic metal atoms into nonmagnetic semiconductors has been widely explored. However, achieving robust magnetic ordering for functional RT diluted magnetic semiconductors (DMSs) remains a significant challenge. Here, we report an industry-compatible temperature-gradient melt-growth strategy for the controlled synthesis of large-size single-crystal DMSs based on van der Waals (vdW) semiconductors. In this approach, dilute magnetic doping is enabled by transition-metal iodides as precursors, whose low melting points facilitate efficient incorporation during crystal growth. Using this method, we obtain centimeter-scale bulk single crystals of Fe-doped SnSe (Fe:SnSe) and Fe-doped SnSe₂ (Fe:SnSe₂), both exhibiting robust RT magnetic ordering with transition temperatures of 310 K and 325 K, respectively. This scalable growth strategy, leveraging low-melting transition-metal halides as dopant sources, provides a general route toward a broad class of vdW DMSs and related quantum materials with tunable magnetic and semiconducting properties.

OTHER PAPERS PLANNED FOR THIS SYMPOSIUM

4D-STEM and Machine Learning for Nanoscale Structure-Property Mapping in Emerging Electronic Materials
A General Process to Produce Large-Size Single Crystal Room-Temperature Diluted Magnetic Semiconductors
Atomic-Resolution Imaging of Ferroelectric Domains in Emerging Fluorite-Type Ferroelectrics
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Heterogeneous Integration Using Freestanding Gallium Nitride Membranes
Inverse-Designed 3D Holographic Lithography for Next-Generation Microelectronic Architectures
Ion Beam Treatment to Control Properties of Two-Dimensional Semiconductors
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Laser-Engineered Graphene Composites for Emerging Electronic Nanomaterials
Metal Nanowire-Based Electrodes and Their Applications in Optoelectronics and Bioelectronics
Mxene-enabled Micro-Battery Architectures for Advanced Semiconductor Devices
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Spatiotemporal Laser Control of Iron-Oxide-Nanoparticle-Integrated Graphene Microelectrodes for Bioelectronic Sensing
Sub-5nm Thick Plasma-Enhanced Atomic Layer Deposited Indium Oxynitride Channel Transistor for 3D Monolithic Device Applications
Thermodynamic Modeling and CVD Synthesis of Mo, Nb, and V MXene Precursors
Topological Semimetal and Single-Crystalline Cu for Overcoming Resistivity Scaling in Nanoscale Interconnects
Toward Controlled Synthesis of 2D Materials: Data-Driven Modeling of ALD Growth Mechanisms
Wafer-Scale 2D Semiconductors Integrated on Arbitrary Substrates for Emerging Optoelectronic Artificial Synapses with Flexoelectricity
Field Gradient Engineering of van der Waals Semiconductors

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