About this Abstract |
| Meeting |
2027 TMS Annual Meeting & Exhibition
|
| Symposium
|
Materials and Manufacturing in Space
|
| Presentation Title |
High Performance Semiconductor Devices from Space Grown Crystals on ISS |
| Author(s) |
Partha Dutta, Candy Dang, Geeta Rajagopalan, Tryphena Ho |
| On-Site Speaker (Planned) |
Partha Dutta |
| Abstract Scope |
Recently crystals grown in the SUBSA furnace on the International Space Station have demonstrated that reduced gravity provides the ideal condition for tailoring the microstructure of semiconductor crystals and significantly improves the yield necessary for future large scale electronic device manufacturing. Microstructures in terrestrial and space grown NiSb-InSb crystals depict drastic differences in the NiSb nucleation process at the solid-liquid interface. The space-grown crystal exhibits high-density uniform needles compared to the low-density variable size needles in terrestrial crystals. Using space-grown crystals, a factor of 10 enhancements in device yield with device performance enhancement by a factor of 2 has been demonstrated. The improved gain translates to simpler amplifier design and power consumption in electronic circuits and improvements in system resolution, bandwidth, speed, sensitivity, and reduced size and weight of consumer electronic gadgets. The yield improvement of 10x is crucial for economics of space manufacturing materials for large scale terrestrial applications. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Composites, Electronic Materials, Solidification |