| Abstract Scope |
Mitigating defects induced by ionizing radiation is critical for ensuring reliability in electronic devices, particularly those based on wide-bandgap (WBG) semiconductors for space and nuclear applications. Conventional defect mitigation methods involve material design optimization, radiation shielding, redundancy, or thermal annealing; however, these approaches often impose constraints such as performance trade-offs, complex implementation, or thermal degradation due to thermoelastic strain. To overcome these limitations, we introduce Electron Wind Force (EWF) annealing -a rapid, non-thermal technique performed at near room temperature within seconds. In our studies, EWF effectively rejuvenated radiation-damaged WBG semiconductor devices, repeatedly restoring their electrical characteristics beyond traditional methods. Additionally, we extended this technique successfully to mitigate defects in metal alloys, highlighting EWF’s versatility. Due to its efficiency, simplicity, and in-operando compatibility, EWF annealing emerges as a promising strategy for defect mitigation across diverse materials, significantly enhancing device resilience in radiation-rich environments. |