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Meeting MS&T25: Materials Science & Technology
Symposium Solid-State Optical Materials and Luminescence Properties
Presentation Title Evaluation of line and point defects using optical methods in ZnSe crystal.
Author(s) Jakob Peabody, Lauren Gower, Leslie Scheurer, Ching Hua Su, Eric Bowman, Bradley Arnold, Florence Lucey, Fow-Sen Choa, Brian Cullum, Narsingh Bahadur Singh
On-Site Speaker (Planned) Narsingh Bahadur Singh
Abstract Scope Zinc selenide is an excellent multifunctional crystal are good host material for doping rare-earth and transition metal to achieve mid-infrared and long wave-infrared lasers. The aim of the present study is to investigate point and line defects using optical methods in doped crystals. Morphological and luminescence properties of iron and chromium doped zinc selenide single crystals were studied to evaluate the effect of extremely low residual impurities and defects. The scanning high magnification SEM for the localized area support the conclusion that small crystallites in doped crystals are also present. The emission properties following both short and long wavelength excitation were characterized to highlight the effect of defects. In addition to the primary emission bands, satellite peaks and intra-center transitions were also observed. Due to local population defects associated with the residual impurities (ppm to ppb) in the Fe-ZnSe and Cr-ZnSe crystals, peak emission wavelengths shifted slightly.

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