| Abstract Scope |
Generating defects is able to tune electronic, optical, electrical, and magnetic properties. Ion beam irradiation is a method used for defect engineering in semiconductor industry. Ion beam techniques are capable of controlling defect species, geometrical arrangement of ion beam induced defects, phases, and crystallinity. However, ion beam techniques have not been widely employed to control properties of 2D semiconductors because of the thinness of a 2D semiconductor. We revealed that proton irradiation onto monolayer 2D semiconductors can enhance exciton-to-trion conversion. We study property changes in ion beam-irradiated monolayer 2D semiconductors and their heterostructures. Monolayer WS2, graphene, and WS2/graphene heterostructures were irradiated by ion beams at sub-MeV. Scanning probe microscopy, photoluminescence and Raman spectroscopy techniques, and electrical characterization were employed to study effects of ion beam irradiation onto the 2D semiconductors. Our study shows that properties of 2D semiconductors and their heterostructures can be precisely controlled by ion beam irradiation. |