| Abstract Scope |
Ferroelectric materials retain switchable polarization without external electric fields, offering a promising route toward next-generation nonvolatile memory. Integrating these materials as gate dielectrics enables direct modulation of channel conductance via polarization switching. Hafnia-based ferroelectrics are particularly attractive due to their CMOS compatibility, scalability, and integration advantages, outperforming conventional perovskites in advanced device structures. Consequently, ferroelectric field-effect transistors have emerged as strong candidates for high-density, embedded, and neuromorphic memory applications. This presentation discusses recent progress in hafnia-based ferroelectric memory, emphasizing device operation, conductance modulation, reliability challenges, and performance improvement strategies. Furthermore, the potential extension of ferroelectric devices into three-dimensional architectures and compute-in-memory systems is addressed, highlighting their critical role in enabling low-power, scalable future electronics. |