About this Abstract |
| Meeting |
2027 TMS Annual Meeting & Exhibition
|
| Symposium
|
2D Materials – Preparation, Properties, Modeling & Applications
|
| Presentation Title |
Low-Temperature Growth of Continuous Large-Area Diamond Films Enabled by pulsed laser annealed Q-Carbon Seeding |
| Author(s) |
Fahad Munshe, Kishan Kumawat, Siba Sahoo , Sriram Srinivasan , Jagdish Narayan |
| On-Site Speaker (Planned) |
Fahad Munshe |
| Abstract Scope |
Low-temperature diamond growth enables the direct integration of high-thermal-conductivity diamond films with advanced semiconductor devices for efficient thermal management. However, integrating diamonds with such devices remains challenging due to the high temperatures typically required for diamond growth, which can damage device components. This study demonstrates the growth of continuous, large-area, high-quality diamond films at low temperatures (450-600°C) using Q-carbon seeding. The Q-carbon layer, containing approximately 80% sp³-bonded carbon, was produced by pulsed laser annealing of amorphous carbon with an initial sp³ content of ~30%, followed by hot-filament chemical vapor deposition of diamond. Phase purity and crystalline quality improved systematically with increasing substrate temperature, reaching 99% diamond purity and a Raman FWHM of 6.65 cm⁻¹ at 450°C. This study demonstrates the effectiveness of Q-carbon in promoting low-temperature diamond nucleation and growth for thermal management applications. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Electronic Materials, Thin Films and Interfaces, Characterization |