| Abstract Scope |
The discovery of ferroelectricity in doped hafnium dioxide thin films has ignited activity in exploration of CMOS compatible ferroelectric FETs for a range of applications from low-power logic to embedded non-volatile memory to in-memory compute kernels. Here, we will present key milestones in the development of Ferroelectric Field Effect Transistor technology (FeFETs) and the emergence of a versatile ferroelectronic platform. FeFETs exhibit superior energy efficiency and high performance as embedded nonvolatile memory. When embedded into an SRAM or D-flip-flop, they enable fast data backup and recovery for IoT applications powered intermittently by energy harvesters. The polarization switching dynamics in multi-domain ferroelectric can be harnessed to develop analog synaptic weight cell for deep learning accelerators. We have demonstrated ultra-compact FeFET-based in-memory hardware prototype, such as ternary content addressable memory, for memory augmented neural networks suitable for few-shot learning. Therefore, ferroelectronics has emerged as a promising platform for improving embedded memory performance. |