About this Abstract |
| Meeting |
2026 TMS Annual Meeting & Exhibition
|
| Symposium
|
Electronic Packaging and Interconnection Materials III
|
| Presentation Title |
Directional Electromigration-Induced Void Nucleation in Copper Bicrystals for TSV Reliability: A Molecular-Dynamics Study |
| Author(s) |
Armin Shashaani, Panthea Sepehrband |
| On-Site Speaker (Planned) |
Armin Shashaani |
| Abstract Scope |
Molecular-dynamics simulations were used to examine stress-assisted, electromigration-induced void nucleation in copper bicrystals representative of Through-Silicon Vias (TSVs) in 3D IC packaging. Systems spanning different tilt angles for the <100>, <110>, and <111> misorientation axes were subjected to combined uniaxial tension and orthogonally oriented electron-wind forces at elevated temperature. A pronounced directional dependence emerged: forces parallel to dislocation lines inside the grain boundary delayed failure, whereas transverse forces accelerated vacancy clustering and void formation. Compressive pre-stresses generated during thermally constrained NVT heating influenced the subsequent stress–strain response, and atomic-scale visualization showed that voids nucleated within the grain-boundary region rather than at fixed surfaces. The results demonstrate how crystallographic orientation, electromigration direction, and thermal history jointly govern the reliability of TSVs in 3D ICs in the semiconductor industry. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Computational Materials Science & Engineering, ICME, Mechanical Properties |