About this Abstract |
| Meeting |
2027 TMS Annual Meeting & Exhibition
|
| Symposium
|
Photomechanical and Electromechanical Effects in Structural and Functional Materials
|
| Presentation Title |
Hosting 1D Topological States at Dislocations in Semiconducting BiSb Alloys |
| Author(s) |
Rachel S. Goldman |
| On-Site Speaker (Planned) |
Rachel S. Goldman |
| Abstract Scope |
The continuing miniaturization of semiconductor chips with ever-increasing functionality is enabled by understanding new functionalities associated with point, line, and extended defects. For example, point defects may be harnessed for quantum information, while line and extended may provide new opportunities in classical and quantum computing.
Here, we consider the conduction pathways associated with extended defects in topological semiconducting Bi-Sb alloys with extraordinarily high electron mobilities. We characterize the structure and physical properties using high-angle annular-dark-field scanning transmission electron microscopy and electron-channeling contrast imaging in conjunction with magnetotransport measurements. Using high magnetic fields, we suppress bulk conduction, enabling the identification of the residual conductivity associated with extended defects. In addition to reporting on these findings, we discuss approaches to generate multiple-micron-length {001}<100> type dislocations using wedge nano-indentation. We also discuss progress towards measuring the states associated with these dislocations using the Corbino disk geometry to suppress conduction at side surfaces. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Electronic Materials, Characterization, Sustainability |