| Abstract Scope |
As the semiconductor industry transitions from planar to increasingly complex 3D architectures, the need for scalable and precise nanofabrication methods has become paramount. Proximity field nanopatterning (PnP), a 3D holographic lithography technique developed by our group since 2003, offers unparalleled throughput and efficiency compared to conventional multi-step lithography or 3D printing. While PnP has demonstrated vast potential in creating mechanical metamaterials and energy electrodes, its most transformative impact lies in the realization of non-periodic, customized 3D nanostructures required for future microelectronics. In this talk, we introduce a novel inverse-design methodology for phase masks to achieve targeted 3D nanostructures. By utilizing adjoint-based optimization and iterative algorithms, we have successfully calculated the complex mask patterns necessary to generate specific 3D holograms within a photoresist. This approach allows for the fabrication of the intricate 3D internal structures essential for next-generation semiconductor devices, such as high-density interconnects and 3D-stacked channels. |